Reduced spectral linewidth in high output power DFB lasers

被引：0

作者：

Inaba, Y ^{[1
]}

Kito, M ^{[1
]}

Takizawa, T ^{[1
]}

Nakayama, H ^{[1
]}

Ishino, M ^{[1
]}

Itoh, K ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Device Res Ctr, Moriguchi, Osaka 5708501, Japan

来源：

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2000年

关键词：

D O I：

10.1109/ISLC.2000.882300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of threshold carrier density on spectral linewidth in DFB lasers with high output power has been studied. A narrow spectral-linewidth of 0.3 MHz and the record output power of 180 mW are achieved in 1.55 mum DFB lasers with reduced threshold carrier density.

引用

页码：85 / 86

页数：2

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