Reduced spectral linewidth in high output power DFB lasers

被引：0
|
作者：
Inaba, Y [1 ]
Kito, M [1 ]
Takizawa, T [1 ]
Nakayama, H [1 ]
Ishino, M [1 ]
Itoh, K [1 ]
机构：
[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Device Res Ctr, Moriguchi, Osaka 5708501, Japan
来源：
2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2000年
关键词：
D O I：
10.1109/ISLC.2000.882300
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effect of threshold carrier density on spectral linewidth in DFB lasers with high output power has been studied. A narrow spectral-linewidth of 0.3 MHz and the record output power of 180 mW are achieved in 1.55 mum DFB lasers with reduced threshold carrier density.
引用
收藏
页码：85 / 86
页数：2
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