The effect of Fe on the absorption spectra in TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 layer single crystals

被引：0
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作者：
Gürbulak, B [1 ]
机构：
[1] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 184卷 / 02期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 single crystals were grown by the modified Bridgman Stockbarger method. They did not have cracks and voids on their surface. The absorption measurements were carried out on TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 samples in the temperature range 10-320 K with steps of 10K. The phonon energies calculated for TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 are (19.70 +/- 5), (40.2 +/- 5) and (15.1 +/- 5) meV, respectively. The first and second defect levels have been found as 2.423 and 2.569 eV for TlGa0.99Fe0.01S2 and as 2.017 and 2.426 eV for TlGa0.98Fe0.02S2 at 10 K, respectively.
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页码：349 / 357
页数：9
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