Influence of electron irradiation on the band gap and microhardness of TlInS2, TlInSSe and TlIn0.99Cr0.01S2 single crystals

被引：0

作者：

Khallokov F.К. ^{[1
]}

Imanova G.T. ^{[2
,3
,4
]}

Umarov S. ^{[1
]}

Tashmetov M. ^{[4
]}

Gasanov N.Z. ^{[5
]}

Esanov Z.U. ^{[4
]}

Bekpulatov I.R. ^{[6
]}

机构：

[1] Department of Physics, Bukhara Medical Institute named after. Abu Ali ibn Sino, Bukhara

[2] Ministry of Science and Education, Institute of Radiation Problems, Baku

[3] Department of Physics and Electronics, Khazar University, Baku

[4] Department of Physics, Western Caspian University, Baku

[5] Department of Phyiscs, Institute of Physics under the Ministry of Science and Education of the Republic of Azerbaijan, Baku

[6] Department of Physics, Karshi State University, Karshi

来源：

Imanova, G.T. (gunel_imanova55@mail.ru) | 2025年 / 29卷 / 01期

关键词：

band gap; crystals; Electron; irradiation; microhardness;

D O I：

10.1080/14328917.2024.2363583

中图分类号：

学科分类号：

摘要：

This work investigated the effect of partial replacement of sulphur atoms with selenium atoms (TlInSSe) and indium atoms with chromium atoms (TlIn0.99Cr0.01S2) on the band gap and microhardness of TlInS2 single crystals irradiated with electrons with energy of 2 MeV and a fluence of up to 1.5 × 1017 el/cm2. The band gap from the measured absorption spectra was determined using the Tauc method. It has been established that this irradiation leads to a decrease in the band gap in TlInS2, TlInSSe and TlIn0.99Cr0.01S2 crystals. It has been shown that after electron irradiation the microhardness of these crystals increased due to an increase in the size of crystallites on their surface. © 2024 Informa UK Limited, trading as Taylor & Francis Group.

引用

页码：46 / 50

共 22 条

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