Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures

被引：0

作者：

Palade, Catalin ^{[1
]}

Slav, Adrian ^{[1
]}

Lepadatu, Ana-Maria ^{[1
]}

Teodorescu, Valentin Serban ^{[1
]}

Ciurea, Magdalena Lidia ^{[1
]}

机构：

[1] Natl Inst Mat Phys, Magurele 077125, Romania

来源：

2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2014年

关键词：

Ge nanocrystals; HfO2; magnetron sputtering; charge storage; HIGH-K MATERIALS; SIO2; MATRIX; DIELECTRIC-PROPERTIES; HAFNIUM OXIDE; FILMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the charge storage properties of trilayer structures consisting in sputtered gate HfO2/co-sputtered Ge-HfO2 layer/rapid thermal tunneling SiO2 oxide. Investigations of transmission electron microscopy and X-ray diffraction evidence the formation of HfO2 with mixed structure of monoclinic and tetragonal in the annealed structures. Capacitance-voltage (C-V) characteristics were measured on Al/HfO2/Ge-HfO2/SiO2/Si/Al metal-oxide-semiconductor capacitors based on as-deposited and annealed structures. Large C-V hysteresis is observed for the as-deposited structures and is controlled by traps present in oxide and interface. The annealing yields a C-V hysteresis with smaller memory window being due to injected charges in Ge nanocrystals.

引用

页码：59 / 62

页数：4

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