Ferroelectrics: new wide-gap materials for UV detection

被引：31
|
作者：
Pintilie, L [1 ]
Pintilie, I [1 ]
机构：
[1] Natl Inst Mat Phys, Bucharest 76900, Romania
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期
关键词：
photoconductivity; wide band sap semiconductors; thin film; ferroelectric;
D O I：
10.1016/S0921-5107(00)00605-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoconductive properties of some sol-gel deposited. ferroelectrie thin films are investigated in the ultraviolet (UV) domain. The investigated materials are: Bi4Ti3O12 (BiT), SrBi2Ta2O9 (SBT) and Pb(Zr0.45Ti0.55)O-3 (PZT). It was found that all these materials exhibit pronounced photoconductivity in the 250-500 nm domain. The best current responsivity was obtained for Bi4Ti3O12 (BiT) films. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：388 / 391
页数：4
相关论文
共 50 条
  • [21] Room-Temperature Wide-Gap Inorganic Materials with Excellent Plasticity
    Huang, Haoran
    Chen, Heyang
    Gao, Zhiqiang
    Ma, Yupeng
    Zhao, Kunpeng
    Wei, Tian-Ran
    Shi, Xun
    ADVANCED FUNCTIONAL MATERIALS, 2023,
  • [22] New Bounds on Wide-Gap Frequency-Hopping Sequences
    Li, Peihua
    Fan, Cuiling
    Yang, Yang
    Wang, Yong
    IEEE COMMUNICATIONS LETTERS, 2019, 23 (06) : 1050 - 1053
  • [23] New Bounds for Aperiodic Wide-Gap Frequency Hopping Sequences∗
    Tian, Xinyu
    Han, Hongyu
    Zhou, Limengnan
    Wu, Hanzhou
    IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, 2025, E108A (02) : 165 - 168
  • [24] Theory of interfaces in wide-gap nitrides
    Nardelli, MB
    Rapcewicz, K
    Briggs, EL
    Bungaro, C
    Bernholc, J
    III-V NITRIDES, 1997, 449 : 893 - 898
  • [25] Magnetic susceptibility of wide-gap semiconductors
    Davydov, SY
    Tikhonov, SK
    SEMICONDUCTORS, 1996, 30 (04) : 375 - 376
  • [26] Deformation potential of wide-gap semiconductors
    Davydov, SY
    Tikhonov, SK
    SEMICONDUCTORS, 1996, 30 (06) : 602 - 602
  • [27] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS
    KROEMER, H
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537
  • [28] Anharmonic properties of wide-gap semiconductors
    Davydov, SY
    Tikhonov, SK
    SEMICONDUCTORS, 1996, 30 (06) : 514 - 516
  • [29] THE WIDE-GAP RESISTIVE PLATE CHAMBER
    CROTTY, I
    ZEBALLOS, EC
    VALVERDE, JL
    HATZIFOTIADOU, D
    WILLIAMS, MCS
    ZICHICHI, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 360 (03): : 512 - 520
  • [30] ACCEPTORS IN WIDE-GAP SEMIMAGNETIC SEMICONDUCTORS
    MYCIELSKI, J
    RIGAUX, C
    JOURNAL DE PHYSIQUE, 1983, 44 (09): : 1041 - 1049
12345