Ferroelectrics: new wide-gap materials for UV detection

被引：31
|
作者：
Pintilie, L [1 ]
Pintilie, I [1 ]
机构：
[1] Natl Inst Mat Phys, Bucharest 76900, Romania
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期
关键词：
photoconductivity; wide band sap semiconductors; thin film; ferroelectric;
D O I：
10.1016/S0921-5107(00)00605-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoconductive properties of some sol-gel deposited. ferroelectrie thin films are investigated in the ultraviolet (UV) domain. The investigated materials are: Bi4Ti3O12 (BiT), SrBi2Ta2O9 (SBT) and Pb(Zr0.45Ti0.55)O-3 (PZT). It was found that all these materials exhibit pronounced photoconductivity in the 250-500 nm domain. The best current responsivity was obtained for Bi4Ti3O12 (BiT) films. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：388 / 391
页数：4
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