Modeling of HgCdTe photoconductive infrared detector with metallic nanostructures

被引：0
|
作者：
Liang, J. [1 ]
Hu, W. D. [1 ]
Chen, X. S. [1 ]
Li, Z. F. [1 ]
Lu, W. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
2014 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2014) | 2014年
关键词：
PIXEL ARRAYS; SIMULATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An HgCdTe photoconductive infrared detector with metallic nanostructures has been numerically studied. The plasmonic resonant absorption and the photo current response spectra of the detector are investigated by using a combination of the FDTD method and FEM method. The simulated results show the dependence between the geometric design and the performance of the detector. A higher photo response can be achieved in comparison to common HgCdTe photoconductive infrared detector.
引用
收藏
页码：179 / 180
页数：2
相关论文
共 50 条
  • [31] HETERODYNE QUANTUM EFFICIENCY OF A HGCDTE INFRARED DOPPLER DETECTOR
    MA, KY
    HALL, FF
    HARDESTY, RM
    LAWRENCE, TR
    CUPP, RE
    APPLIED OPTICS, 1989, 28 (10): : 1750 - 1751
  • [32] A monolithic dual-band HgCdTe infrared detector
    Musca, CA
    Siliquini, JF
    Parish, G
    Dell, JM
    Faraone, L
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1284 - 1287
  • [33] Advances in 15 mu m HgCdTe photovoltaic and photoconductive detector technology for remote sensing
    Reine, MB
    Krueger, EE
    ODette, P
    Terzis, CL
    Denley, B
    Hartley, J
    Rutter, J
    Kleinmann, DE
    INFRARED DETECTORS FOR REMOTE SENSING: PHYSICS, MATERIALS, AND DEVICES, 1996, 2816 : 120 - 137
  • [34] The carrier transportation of photoconductive HgCdTe detector irradiated by CW band-off laser
    Jiang Tian
    Zheng Xin
    Cheng Xiang-Ai
    Xu Zhong-Jie
    Jiang Hou-Man
    Lu Qi-Sheng
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2012, 31 (03) : 216 - 221
  • [35] Bonding of photoconductive HgCdTe sensors
    Rozman, D., 1990, (40) : 1 - 2
  • [36] Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector
    Lin, CT
    Su, YK
    Huang, HT
    Chang, SJ
    Chen, GS
    Sun, TP
    Luo, JJ
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 168 - 174
  • [37] Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling
    Srivastav, Vanya
    Pal, R.
    Venkataraman, V.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
  • [38] RESPONSE TIME OF A GE - IN FAR-INFRARED PHOTOCONDUCTIVE DETECTOR
    KOBAYASHI, S
    TAKEUCHI, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (01) : 86 - +
  • [39] Modeling of Dark Current in HgCdTe Infrared Detectors
    Ferron, A.
    Rothman, J.
    Gravrand, O.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3303 - 3308
  • [40] Study on low-temperature photoconductive InSb infrared detector
    Jia, Bao-Jun
    Ying, Ming-Jiong
    Zheng, Su-Dan
    Zhang, Jian
    Jiguang Yu Hongwai/Laser and Infrared, 2002, 32 (01):
12345