A monolithic dual-band HgCdTe infrared detector

被引：0
|
作者：
Musca, CA [1 ]
Siliquini, JF [1 ]
Parish, G [1 ]
Dell, JM [1 ]
Faraone, L [1 ]
机构：
[1] Univ Western Australia, Dept Elect & Elect Engn, Nedlands, WA 6907, Australia
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
infrared; multispectral; photodetector; HgCdTe;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The structure is the first reported on-pixel registered monolithic dual-band HgCdTe photoconductor. The technology is demonstrated by fabricating HgCdTe photoconductive detectors and the fabricated detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1284 / 1287
页数：4
相关论文
共 50 条
  • [1] A monolithic dual-band HgCdTe infrared detector structure
    Parish, G
    Musca, CA
    Siliquini, JF
    Antoszewki, J
    Dell, JM
    Nener, BD
    Faraone, L
    Gouws, GJ
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) : 352 - 354
  • [2] A Dual-Band HgCdTe nBn Infrared Detector Design
    Uzgur, Fatih
    Kocaman, Serdar
    INFRARED SENSORS, DEVICES, AND APPLICATIONS IX, 2019, 11129
  • [3] Numerical analysis of HgCdTe dual-band infrared detector
    M. Kopytko
    W. Gawron
    A. Kębłowski
    D. Stępień
    P. Martyniuk
    K. Jóźwikowski
    Optical and Quantum Electronics, 2019, 51
  • [4] Numerical analysis of HgCdTe dual-band infrared detector
    Kopytko, M.
    Gawron, W.
    Keblowski, A.
    Stepien, D.
    Martyniuk, P.
    Jozwikowski, K.
    OPTICAL AND QUANTUM ELECTRONICS, 2019, 51 (03)
  • [5] Numerical analysis of HgCdTe dual-band infrared detector
    Kopytko, M.
    Gawron, W.
    Keblowski, A.
    Stepien, D.
    Martyniuk, P.
    Jozwikowski, K.
    2018 18TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2018), 2018, : 13 - 14
  • [6] Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure
    Parish, G
    Musca, CA
    Siliquini, JF
    Antoszewski, J
    Dell, JM
    Nener, BD
    Faraone, L
    Gouws, GJ
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 46 - 49
  • [7] HgCdTe monolithic infrared detector
    Yakushev, Maxim V.
    Dvoretsky, Sergei A.
    Kozlov, Alexander I.
    Sabinina, Irina V.
    Sidorov, Yuri G.
    Sorochkin, Alexander V.
    Fomin, Boris I.
    Aseev, Alexander L.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6, 2010, 7 (06): : 1681 - 1683
  • [8] Dual-band infrared HgCdTe focal plane array
    de Borniol, E
    Baylet, J
    Zanatta, JP
    Mibord, S
    Gravrand, O
    Rothan, F
    Castelein, P
    Chamonal, JP
    Ravetto, M
    Destéfanis, G
    INFRARED TECHNOLOGY AND APPLICATIONS XXV111, PTS 1 AND 2, 2003, 4820 : 491 - 499
  • [9] INDEPENDENTLY ACCESSED BACK-TO-BACK HGCDTE PHOTODIODES - A NEW DUAL-BAND INFRARED DETECTOR
    REINE, MB
    NORTON, PW
    STARR, R
    WEILER, MH
    KESTIGIAN, M
    MUSICANT, BL
    MITRA, P
    SCHIMERT, T
    CASE, FC
    BHAT, IB
    EHSANI, H
    RAO, V
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (05) : 669 - 679
  • [10] Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors
    Vallone, Marco
    Goano, Michele
    Tibaldi, Alberto
    Hanna, Shane
    Eich, Detlef
    Sieck, Alexander
    Figgemeier, Heinrich
    Ghione, Giovanni
    Bertazzi, Francesco
    APPLIED OPTICS, 2020, 59 (19) : 5656 - 5663
12345