Micro-Raman study of mechanical stress in polycrystalline silicon bridges

被引：0
|
作者：
Talaat, H [1 ]
Negm, S [1 ]
Schaffer, H [1 ]
Kaltsas, G [1 ]
Nassiopoulou, AG [1 ]
机构：
[1] Ain Shams Univ, Fac Sci, Cairo, Egypt
来源：
THIN-FILMS - STRESSES AND MECHANICAL PROPERTIES VII | 1998年 / 505卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Micro-Raman spectroscopy is used to study mechanical stress distribution in polycrystalline silicon bridges on cavities micromachined in crystalline Si wafers. The influence of the processing parameters such as the thickness of polycrystalline membrane, the annealing conditions (before or after removal of the sacrificial porous-Si layer), are studied. The results indicate that the annealing reduces the residual stress by an order of magnitude and that the membrane thickness of 2.5 mu m has the least residual stress.
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页码：495 / 500
页数：4
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