Experimental validation of mechanical stress models by micro-Raman spectroscopy

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作者：
IMEC, Leuven, Belgium [1 ]
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来源：
Microelectron Reliab | / 11-12卷 / [d]1751-1754期
关键词：
Cobalt compounds - Raman spectroscopy - Semiconductor device models - Semiconductor devices - Silicon nitride - Stress analysis - Tungsten;
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摘要：
It is shown that micro-Raman spectroscopy offers a unique tool for the validation of stress models for microelectronics devices. Starting from an analytical or numerical model that describes the variation of local stress in a device, the corresponding Raman shift is calculated and compared with the data. In this way feed-back is given to the model. This technique is demonstrated for stripes (Si3N4, CoSi2, W) on a Si substrate, but can be applied to any device where Raman data can be obtained.
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