Experimental validation of mechanical stress models by micro-Raman spectroscopy

被引：0
|
作者：
IMEC, Leuven, Belgium [1 ]
机构：
来源：
Microelectron Reliab | / 11-12卷 / [d]1751-1754期
关键词：
Cobalt compounds - Raman spectroscopy - Semiconductor device models - Semiconductor devices - Silicon nitride - Stress analysis - Tungsten;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that micro-Raman spectroscopy offers a unique tool for the validation of stress models for microelectronics devices. Starting from an analytical or numerical model that describes the variation of local stress in a device, the corresponding Raman shift is calculated and compared with the data. In this way feed-back is given to the model. This technique is demonstrated for stripes (Si3N4, CoSi2, W) on a Si substrate, but can be applied to any device where Raman data can be obtained.
引用
收藏
相关论文
共 50 条
  • [31] CHARACTERIZATION OF MATERIALS BY MICRO-RAMAN SPECTROSCOPY
    HUONG, PV
    VERMA, AL
    CHAMINADE, JP
    NGANGA, L
    FRISON, JC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02): : 255 - 260
  • [32] Micro-Raman spectroscopy of meteorite Kosice
    Kanuchova, Z.
    Baratta, G. A.
    METEOROIDS 2013, 2014, (86): : 141 - 146
  • [33] Characterization of emeralds by micro-Raman spectroscopy
    Bersani, Danilo
    Azzi, Giulia
    Lambruschi, Erica
    Barone, Germana
    Mazzoleni, Paolo
    Raneri, Simona
    Longobardo, Ugo
    Lottici, Pier Paolo
    JOURNAL OF RAMAN SPECTROSCOPY, 2014, 45 (11-12) : 1293 - 1300
  • [34] The identification of microorganisms by micro-Raman spectroscopy
    Rösch, P
    Schmitt, M
    Kiefer, W
    Popp, J
    JOURNAL OF MOLECULAR STRUCTURE, 2003, 661 : 363 - 369
  • [35] MICRO-RAMAN SPECTROSCOPY ON A SINGLE CARBON-FIBER UNDER STRESS
    BRZEZINKA, KW
    REICH, P
    HAMPE, A
    SCHULZ, E
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1995, 352 (05): : 486 - 488
  • [36] Investigation Of Stress Generated By Interconnection Processes With Micro-Raman Spectroscopy (μRS)
    Liu, E.
    Bhogaraju, Sri Krishna
    Lux, Kerstin
    Elger, Gordon
    Mou, Rokeya Mumtahana
    IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022), 2022, : 739 - 745
  • [37] PERFORMANCE ANALYSIS OF MICRO-RAMAN SPECTROSCOPY MODELS FOR THERMAL CONDUCTIVITY CALCULATION
    Meydando, Taher
    Donmezer, Nazli
    PROCEEDINGS OF ASME 2021 INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS (INTERPACK2021), 2021,
  • [38] Measurement of biaxial stress states in silicon using micro-Raman spectroscopy
    Gustafson, Peter A.
    Harris, Stephen J.
    O'Neill, Ann E.
    Waas, Anthony M.
    JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 2006, 73 (05): : 745 - 751
  • [39] Measurement of biaxial stress states in silicon using micro-raman spectroscopy
    Gustafson, Peter A.
    Harris, Stephen J.
    O'Neill, Ann E.
    Waas, Anthony M.
    Journal of Applied Mechanics, Transactions ASME, 2006, 73 (05): : 745 - 751
  • [40] Micro-Raman spectroscopy stress measurement method for porous silicon film
    Li, Qiu
    Qiu, Wei
    Tan, Haoyun
    Guo, Jiangang
    Kang, Yilan
    OPTICS AND LASERS IN ENGINEERING, 2010, 48 (11) : 1119 - 1125
12345