Enhanced Light Output of GaN-Based Thin-Film Flip-Chip Light-Emitting Diodes by surface texturing using laser ablation and chemical etching

被引：0
|
作者：
Lin, Tseng-Hsing [1 ]
Wang, Shui-Jinn [1 ,2 ]
Tu, Yung-Chun [1 ]
Hung, Chien-Hsiung [1 ]
You, Zong-Sian [1 ]
Chin, Yu-Hsueh [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
来源：
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2015年
关键词：
EXTRACTION ENHANCEMENT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1x1 mm(2)) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08% (12.81%) and wall-plug efficiency (WPE) by 2.87% (2.25%) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.
引用
收藏
页码：123 / 124
页数：2
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