Growth of bulk and superlattice GaAsSb layers on InP

被引：2
|
作者：
Giani, A
Pascal-Delannoy, F
Camassel, J
Norman, AG
机构：
[1] Univ Montpellier 2, CEM, CNRS, F-34095 Montpellier 5, France
[2] Univ Montpellier 2, GES, CNRS, F-34095 Montpellier, France
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 04期
关键词：
D O I：
10.1023/A:1006714609644
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The MOCVD growth of GaAsSb on InP was achieved in the center of the miscibility gap. The resulting layers show good crystalline and optical quality. In some cases, samples were grown with spontaneous superlattice structures. The corresponding structural parameters were found from a self-consistent approach and were confirmed by TEM and TED studies.
引用
收藏
页码：363 / 366
页数：4
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