Area-effcient re-encoding scheme for NAND Flash Memory with multimode BCH Error correction

被引:5
|
作者
Subbiah, Arul K. [1 ]
Ogunfunmi, Tokunbo [1 ]
机构
[1] Santa Clara Univ, Dept Elect Engn, Santa Clara, CA 95053 USA
关键词
Bose-Chaudhuri-Hocquenghen (BCH); encoder; linear-feedback shift register (LFSR); multimode; NAND Flash Memory; syndrome; ARCHITECTURES;
D O I
10.1109/ISCAS.2018.8351503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a novel method to reduce the area of the Bose Chaudhuri Hocquenghen (BCH) multimode encoder based on a re-encoding scheme. Previous methods for multimode BCH use several linear-feedback shift registers (LFSR) cascaded in series to achieve area efficient encoder, but for longer BCH codes the critical path becomes an issue for high throughput. A new encoding scheme is proposed to reduce the critical path for long BCH code. Without sacrificing the latency, this method reduces the hardware complexity by reusing the same module for the encoder and the syndrome generator, which is the first stage of the BCH decoder. The experimental results show that, in the case of BCH (8191, 7983, 16), there are logic savings of 25% between the encoder and the syndrome generator, and the method provides a reconfigurable error correction capability (tsel).
引用
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页数:5
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共 37 条
  • [1] A hybrid multimode BCH encoder architecture for area efficient re-encoding approach
    Tang, Hoyoung
    Jung, Gihoon
    Park, Jongsun
    [J]. 2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2015, : 1997 - 2000
  • [2] VLSI Implementation of BCH Error Correction for Multilevel Cell NAND Flash Memory
    Choi, Hyojin
    Liu, Wei
    Sung, Wonyong
    [J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2010, 18 (05) : 843 - 847
  • [3] An Adaptive-Rate Error Correction Scheme for NAND Flash Memory
    Chen, Te-Hsuan
    Hsiao, Yu-Ying
    Hsing, Yu-Tsao
    Wu, Cheng-Wen
    [J]. 2009 27TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS, 2009, : 53 - 58
  • [4] Polar Code-Based Error Correction Code Scheme for NAND Flash Memory Applications
    Song, Haochuan
    Zhang, Chuan
    Zhang, Shunqing
    You, Xiaohu
    [J]. 2016 8TH INTERNATIONAL CONFERENCE ON WIRELESS COMMUNICATIONS & SIGNAL PROCESSING (WCSP), 2016,
  • [5] Trends and challenges in design of embedded BCH error correction codes in multi-levels NAND flash memory devices
    Nabipour, Saeideh
    Javidan, Javad
    Drechsler, Rolf
    [J]. Memories - Materials, Devices, Circuits and Systems, 2024, 7
  • [6] Error Analysis and Adaptable Error-correct Scheme for NAND Flash Memory
    Pan, Yu-qian
    Liu, Zheng-lin
    [J]. 2ND INTERNATIONAL CONFERENCE ON COMMUNICATIONS, INFORMATION MANAGEMENT AND NETWORK SECURITY (CIMNS 2017), 2017, : 59 - 63
  • [7] A BCH error correction scheme applied to FPGA with embedded memory
    Liu, Yang
    Li, Jie
    Wang, Han
    Zhang, Debiao
    Feng, Kaiqiang
    Li, Jinqiang
    [J]. FRONTIERS OF INFORMATION TECHNOLOGY & ELECTRONIC ENGINEERING, 2021, 22 (08) : 1127 - 1139
  • [8] Unexpected Error Explosion in NAND Flash Memory: Observations and Prediction Scheme
    Pan, Yuqian
    Zhang, Haichun
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    Liu, Zhenglin
    [J]. 2020 IEEE 29TH ASIAN TEST SYMPOSIUM (ATS), 2020, : 59 - 64
  • [9] Error correction capability aware BCH implementation for NAND flash memories in Earth observation satellites
    Aydogdu, M. Fatih
    Mert, Yakup Murat
    [J]. SATELLITE DATA COMPRESSION, COMMUNICATIONS, AND PROCESSING XI, 2015, 9501
  • [10] Optimum Quantization for Signal Processing and Error Correction in NAND Flash Memory
    Lee, Dong-hwan
    Kim, Jonghong
    Sung, Wonyong
    [J]. 2013 INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS (ISSCS), 2013,