Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics.

被引：0

作者：

Zerbo, Bienlo ^{[1
]}

Modreanu, Mircea ^{[2
]}

Povey, Ian ^{[2
]}

Letoublon, Antoine ^{[1
]}

Rolland, Alain ^{[1
]}

Pedesseau, Laurent ^{[1
]}

Even, Jacky ^{[1
]}

Lepine, Bruno ^{[3
]}

Turban, Pascal ^{[3
]}

Schieffer, Philippe ^{[3
]}

Moreac, Alain ^{[3
]}

Durand, Olivier ^{[1
]}

机构：

[1] Inst FOTON UMR 6082, F-35000 Rennes, France

[2] Univ Coll Cork, Tyndall Natl Inst, Cork T12 R5CP, Ireland

[3] Univ Rennes, CNRS, IPR Inst Phys Rennes UMR 6251, Rennes, France

来源：

2021 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2021年

关键词：

SOLAR-CELL;

D O I：

10.1109/CAS52836.2021.9604140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A focus is made here on the optimization of the MoS2 material and its deposition process, through preliminary optical and structural characterizations of thin 2H-MoS2 layers deposited on 80nm SiO2 on top of Si (001) substrates. Our investigations revealed oxidation of the MoS2 layers, and limited longitudinal crystallite size, which may strongly affect the band lineup between MoS2 and Si, and thus, the performance of the solar cell.

引用

页码：151 / 154

页数：4

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