Optical absorption in air/monolayer MoS2/S (S=SiO2 or Si) trilayer stacks at oblique incidence

被引:15
|
作者
Ansari, N. [1 ]
Moradi, M. [1 ]
机构
[1] Alzahra Univ, Dept Phys, Tehran 1993893973, Iran
关键词
Monolayer MoS2; Optical absorption; Critical and pseudo-Brewster's angles; Internal and external reflection; METAMATERIAL STRUCTURES; MONOLAYER MOS2; GRAPHENE; SILICON; FILMS;
D O I
10.1016/j.spmi.2017.02.010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The monolayer MoS2 with strong light-matter interaction and optoelectronic properties is useful to design different optical devices such as photonic absorbers. In this paper, the MoS2 monolayer is sandwiched in the following stacks: SiO2/MoS2/air and Si/MoS2/air to study of increasing optical absorption. We study theoretically the absorption of these stacks as a function of polarization, incident angle and wavelength to reach the maximum value in the visible regime. The absorption intensity reaches to be as high as 65% for internal reflection and s polarization, around the blue wavelength for air/MoS2/SiO2 stack. Absorption behavior including maxima points as a function of wavelength is correlated with imaginary component of refractive index of the monolayer MoS2 except around critical angle. Our results recommend important role of internal and external reflection, cover and substrate layer, angle of incidence and polarization to design elements for optical energy harvesting applications. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:104 / 111
页数:8
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