Facile growth of monolayer MoS2 film areas on SiO2

被引：63

作者：

Mann, John ^{[1
]}

Sun, Dezheng ^{[1
,2
,3
]}

Ma, Quan ^{[1
]}

Chen, Jen-Ru ^{[1
]}

Preciado, Edwin ^{[1
]}

Ohta, Taisuke ^{[4
]}

Diaconescu, Bogdan ^{[4
]}

Yamaguchi, Koichi ^{[1
]}

Tai Tran ^{[1
]}

Wurch, Michelle ^{[1
]}

Magnone, KatieMarie ^{[1
]}

Heinz, Tony F. ^{[2
,3
]}

Kellogg, Gary L. ^{[4
]}

Kawakami, Roland ^{[1
]}

Bartels, Ludwig ^{[1
]}

机构：

[1] Univ Calif Riverside, Riverside, CA 92521 USA

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

EUROPEAN PHYSICAL JOURNAL B | 2013年 / 86卷 / 05期

基金：

美国国家科学基金会;

关键词：

ATOMIC-SCALE STRUCTURE; VALLEY POLARIZATION; THIN-LAYERS;

D O I：

10.1140/epjb/e2013-31011-y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Areas of single-layer MoS2 film can be prepared in a tube furnace without the need for temperature control. The films were characterized by means of Raman spectroscopy, photoluminescence, low-energy electron diffraction and microscopy, and X-ray photoelectron spectroscopy and mapping. Transport measurements show n-doped material with a mobility of 0.26 cm(2) V-1 s(-1).

引用

页数：4

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