Laser machining of GaN-on-diamond wafers

被引：1
|
作者：
Babic, Dubravko I. [1 ]
Diduck, Quentin [1 ]
Faili, Firooz [1 ]
Wasserbauer, John [1 ]
Lowe, Frank [1 ]
Francis, Daniel [1 ]
Ejeckam, Felix [1 ]
机构：
[1] Grp 4 Labs Inc, Fremont, CA 94539 USA
来源：
DIAMOND AND RELATED MATERIALS | 2011年 / 20卷 / 5-6期
关键词：
Gallium nitride on diamond; Laser machining; AlGaN/GaN high-electron mobility transistors; Via processing in diamond; Diamond wafer dicing; POLYCRYSTALLINE DIAMOND; THERMAL-CONDUCTIVITY; CVD-DIAMOND; FILMS; ABLATION; GROWTH;
D O I：
10.1016/j.diamond.2011.03.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The commercialization of gallium-nitride microwave circuits on diamond substrates requires chip-dicing technology and via formation process compatible with standard semiconductor processes. This paper discusses issues related to dicing and drilling of GaN-on-diamond wafers for RF power transistor applications (die size < 1 mm(2)) using laser micromachining. (C) 2011 Elsevier B.V. All rights reserved.
引用
下载
收藏
页码：675 / 681
页数：7
相关论文
共 50 条
  • [1] GAN-ON-DIAMOND WAFERS: RECENT DEVELOPMENTS
    Ejeckam, Felix
    Francis, Daniel
    Faili, Firooz
    Lowe, Frank
    Twitchen, Daniel
    Bolliger, Bruce
    2015 China Semiconductor Technology International Conference, 2015,
  • [2] Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers
    Pomeroy, James W.
    Simon, Roland Baranyai
    Sun, Huarui
    Francis, Daniel
    Faili, Firooz
    Twitchen, Daniel J.
    Kuball, Martin
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (10) : 1007 - 1009
  • [3] Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers
    Sun, Huarui
    Pomeroy, James W.
    Simon, Roland B.
    Francis, Daniel
    Faili, Firooz
    Twitchen, Daniel J.
    Kuball, Martin
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (05) : 621 - 624
  • [4] GaN-on-Diamond: The Next GaN
    Ejeckam, Felix
    Francis, Daniel
    Faili, Firooz
    Lowe, Frank
    Wilman, Jon J.
    Mollart, Tim
    Dodson, Joe
    Twitchen, Daniel J.
    Bolliger, Bruce
    Babic, Dubravko
    MICROWAVE JOURNAL, 2014, 57 (05) : 124 - +
  • [5] GaN-on-diamond: The next GaN
    1600, Horizon House (57):
  • [6] Elimination of leakage in GaN-on-diamond
    Alvarez, B.
    Francis, D.
    Faili, F.
    Lowe, F.
    Twitchen, D.
    Lee, K. B.
    Houston, P.
    2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2016, : 114 - 117
  • [7] GaN-on-Diamond: A Brief History
    Ejeckam, Felix
    Francis, Daniel
    Faili, Firooz
    Twitchen, Daniel
    Bolliger, Bruce
    Babic, Dubravko
    Felbinger, Jonathan
    2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC), 2014,
  • [8] Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices
    Liu, Dong
    Francis, Daniel
    Faili, Firooz
    Middleton, Callum
    Anaya, Julian
    Pomeroy, James W.
    Twitchen, Daniel J.
    Kuball, Martin
    SCRIPTA MATERIALIA, 2017, 128 : 57 - 60
  • [9] GAN-ON-DIAMOND BREAKTHROUGH Promises To Shrink Transistors
    不详
    MICROWAVES & RF, 2013, 52 (05) : 21 - 21
  • [10] Advanced Cooling Designs for GaN-on-Diamond MMICs
    Campbell, Geoffrey
    Eppich, Henry
    Lang, Keith
    Creamer, Carlton
    Yurovchak, Thomas
    Chu, Kanin
    Kassinos, Adonis
    Ohadi, Michael
    Shooshtari, Amir
    Dessiatoun, Serguei
    INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS, 2015, VOL 3, 2015,
12345