1.3 μm wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy

被引：0
|
作者：
Hwang, WY [1 ]
Baillargeon, JN [1 ]
Chu, SNG [1 ]
Sciortino, PF [1 ]
Cho, AY [1 ]
机构：
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷
关键词：
D O I：
10.1109/ISCS.1998.711574
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Successful growth of GaInAsP/InP multi-quantum well lasers directly on a distributed feedback (DFB) grating substrate using all solid source molecular beam epitaxy (MBE) was demonstrated. A 500 Angstrom thick 1.12 mu m wavelength GaInAsP planarization layer was first grown on the DFB gratings at an elevated temperature to create a smooth surface for subsequent layer growth. Transmission electron micrograph showed smooth interfaces after the growth of this GaInAsP planarization layer. Low threshold current density and high quantum efficiency were obtained from these index-coupled DFB lasers grown by solid source MBE.
引用
收藏
页码：109 / 112
页数：4
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