1.3 μm wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy

Successful growth of GaInAsP/InP multi-quantum well lasers directly on a distributed feedback (DFB) grating substrate using all solid source molecular beam epitaxy (MBE) was demonstrated. A 500 Angstrom thick 1.12 mu m wavelength GaInAsP planarization layer was first grown on the DFB gratings at an elevated temperature to create a smooth surface for subsequent layer growth. Transmission electron micrograph showed smooth interfaces after the growth of this GaInAsP planarization layer. Low threshold current density and high quantum efficiency were obtained from these index-coupled DFB lasers grown by solid source MBE.