The effect of growth stoichiometry on the GaN dislocation core structure

被引：0
|
作者：
Baines, MQ [1 ]
Cherns, D [1 ]
Hsu, JWP [1 ]
Manfra, MJ [1 ]
机构：
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
来源：
GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution Studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.
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页码：41 / 46
页数：6
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