The effect of growth stoichiometry on the GaN dislocation core structure

被引：0

作者：

Baines, MQ ^{[1
]}

Cherns, D ^{[1
]}

Hsu, JWP ^{[1
]}

Manfra, MJ ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution Studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

引用

页码：41 / 46

页数：6

共 50 条

[1] The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
Wright, AF
Grossner, U
APPLIED PHYSICS LETTERS, 1998, 73 (19) : 2751 - 2753
[2] Effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
Wright, A.F.
Grossner, Ulrike
Applied Physics Letters, 1998, 73 (19):
[3] ATOMISTIC MODELING OF STOICHIOMETRY EFFECTS ON DISLOCATION CORE STRUCTURE IN NIAL
TERNES, K
XIE, ZY
FARKAS, D
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1995, 192 : 125 - 133
[4] Dislocation structure of growth hillocks in homoepitaxial GaN
Nowak, G
Pakula, K
Grzegory, I
Weyher, JL
Porowski, S
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 649 - 654
[5] Energetics and core structure of the undissociated basal screw dislocation in wurtzite GaN
Belabbas, I.
Chen, J.
Nouet, G.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6, 2016, 13 (5-6): : 221 - 224
[6] Effect of Rhenium on the Dislocation Core Structure in Tungsten
Romaner, Lorenz
Ambrosch-Draxl, Claudia
Pippan, Reinhard
PHYSICAL REVIEW LETTERS, 2010, 104 (19)
[7] Mixed partial dislocation core structure in GaN by high resolution electron microscopy
Kioseoglou, J.
Dimitrakopulos, G. P.
Komninou, Ph.
Kehagias, Th.
Karakostas, Th.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (09): : 2156 - 2160
[8] STRUCTURE OF DISLOCATION CORE
BOURRET, A
DESSEAUX, J
RENAULT, A
JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1977, 2 (05): : 467 - &
[9] Effect of magnesium on the structure and growth of GaN(0001)
Northrup, JE
APPLIED PHYSICS LETTERS, 2005, 86 (12) : 1 - 3
[10] Dislocation core structures in Si-doped GaN
Rhode, S. L.
Horton, M. K.
Fu, W. Y.
Sahonta, S. -L.
Kappers, M. J.
Pennycook, T. J.
Humphreys, C. J.
Dusane, R. O.
Moram, M. A.
APPLIED PHYSICS LETTERS, 2015, 107 (24)

← 1 2 3 4 5 →