Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

被引：5

作者：

Tatsuoka, Y ^{[1
]}

Uemura, M ^{[1
]}

Kitada, T ^{[1
]}

Shimomura, S ^{[1
]}

Hiyamizu, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

growth models; molecular beam epitaxy; phosphides;

D O I：

10.1016/S0022-0248(01)00702-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Surface migration lengths of As adatoms on (4 1 1)A GaAs surfaces during molecular beam epitaxy were determined for the first time from lateral profiles of the arsenic content (x) in the GaAsxP1-x layers grown on GaAs channeled substrates (CSs) using As-4 and P-2 beams. The x on the (4 1 1)A side-slope region near the edge of the (1 0 0) region increased from that on the flat (4 1 1)A GaAs substrate, indicating that As adatoms flow from the (1 0 0) region to the (4 1 1)A side-slope region. The observed surface migration length of As adatoms was 15 +/-2 mum on the (4 1 1)A GaAs surface at 535 degreesC. The surface migration length of As adatoms on (4 1 1)A GaAs surface slightly increases to 20 +/-2 mum with increase of the substrate temperature to 605 degreesC. The substrate temperature (T-s) dependence of surface migration length of As adatoms on the (4 1 1)A GaAs surface is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：266 / 270

页数：5

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