EFFECTS OF SUBSTRATE-TEMPERATURE ON GAAS TUNNELING DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：2

|

作者：

KATSUMOTO, S

AMANO, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.339991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1238 / 1240

页数：3

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