Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy

被引：0

作者：

Garni, B ^{[1
]}

Ma, J ^{[1
]}

Perkins, N ^{[1
]}

Liu, JT ^{[1
]}

Kuech, TF ^{[1
]}

Lagally, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,MADISON,WI 53706

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report scanning tunneling microscopy (STM) images of surfaces of GaN films and the observation of luminescence from those films induced by highly spatially localized injection of electrons or holes using STM. This combination of scanning tunneling luminescence with STM for GaN surfaces and the ability to observe both morphology and luminescence in GaN is the first step to investigate possible correlations between surface morphology and optical properties. (C) 1996 American Institute of Physics.

引用

页码：1380 / 1382

页数：3

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