Scanning tunneling microscopy of the GaN(000(1)over-bar) surface

被引：0
|
作者：
Smith, AR [1 ]
Feenstra, RM
Greve, DW
Neugebauer, J
Northrup, JE
机构：
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[3] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[4] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷
关键词：
D O I：
10.1007/s003390051272
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In-situ scanning tunneling microscopy studies have been performed on the GaN(000 (1) over bar) surface. Four dominant reconstructions have been observed: 1 x 1, 3 x 3, 6 x 6, and c(6 x 12). The I x 1 structure is formed by annealing the as-grown GaN surface to desorb excess Ga atoms. The higher-order reconstructions are formed by depositing submonolayer quantities of Ga atoms onto this 1 x 1 surface. STM images showing the details of the reconstructions are presented and results of quantitative measurements of the number of Ga atoms required to form the various reconstructions are reported. Structural models are compared with the STM data. Reversible order/disorder phase transitions and adatom motion on the GaN surface are discussed.
引用
收藏
页码：S947 / S951
页数：5
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