An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

被引：9
|
作者：
Howes, PB [1 ]
Benamara, M
Grey, F
Feidenhansl, R
Nielsen, M
Rasmussen, FB
Baker, J
机构：
[1] Riso Natl Lab, DK-4000 Roskilde, Denmark
[2] Tech Univ Denmark, Ctr Microelect, DK-2800 Lyngby, Denmark
来源：
PHYSICA B | 1998年 / 248卷
关键词：
X-ray diffraction; semiconductors; twist grain boundaries;
D O I：
10.1016/S0921-4526(98)00206-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(001) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals on either side of the interface. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：74 / 78
页数：5
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