Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

被引：41
|
作者：
Haziq, Muhaimin [1 ]
Falina, Shaili [2 ,3 ]
Manaf, Asrulnizam Abd [2 ]
Kawarada, Hiroshi [3 ,4 ]
Syamsul, Mohd [1 ,3 ]
机构：
[1] Univ Sains Malaysia, Inst Nano Optoelect Res & Technol INOR, Sains USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
[2] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr CEDEC, Sains USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
[3] Waseda Univ, Fac Sci & Engn, Tokyo 1698555, Japan
[4] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, 2 8 26 Nishiwaseda,Shinju Ku, Tokyo 1690051, Japan
来源：
MICROMACHINES | 2022年 / 13卷 / 12期
关键词：
HEMTs; 2DEG; GaN; challenges; opportunities; HIGH BREAKDOWN-VOLTAGE; GAN-BASED HEMTS; GATE LEAKAGE CURRENT; HIGH-K PASSIVATION; P-GAN; FIELD-PLATE; MIS-HEMTS; THRESHOLD VOLTAGE; CURRENT COLLAPSE; MICROWAVE-POWER;
D O I：
10.3390/mi13122133
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device's performance are addressed.
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页数：36
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