The application of minority carrier lifetime techniques in modern CZ silicon

被引：14

作者：

Falster, R ^{[1
]}

Borionetti, G ^{[1
]}

机构：

[1] MEMC Elect Mat SPA, I-28100 Novara, Italy

来源：

RECOMBINATION LIFETIME MEASUREMENTS IN SILICON | 1998年 / 1340卷

关键词：

minority carrier recombination lifetime; Czochralski silicon; transition metals; oxygen precipitation; point defects;

D O I：

10.1520/STP15708S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The applications of minority carrier recombination lifetime measurement techniques to a variety of problems associated with the manufacture and use of modem CZ silicon are discussed. The uses of the ELYMAT and microwave photoconductive decay techniques applied to issues of transition metal contamination, ultra long carrier lifetimes, oxygen clustering and precipitation, intrinsic point defect reactions and gettering phenomena are considered. The uses and limitations of injection level control and surface recombination velocity measurement are also discussed.

引用

页码：226 / 249

页数：24

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