Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

被引：60
|
作者：
Zan, Hsiao-Wen [1 ,2 ]
Tsai, Wu-Wei [1 ,2 ]
Chen, Chia-Hsin [1 ,2 ]
Tsai, Chuang-Chuang [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 37期
关键词：
dot doping; self-alignment; thin-film transistors;
D O I：
10.1002/adma.201102530
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Applying nanometer dot-like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transport in the a-IGZO film. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：4237 / 4242
页数：6
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