Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

被引：89

作者：

Su, Liang-Yu ^{[1
]}

Lin, Hsin-Ying ^{[1
]}

Lin, Huang-Kai ^{[1
]}

Wang, Sung-Li ^{[1
]}

Peng, Lung-Han ^{[1
,2
]}

Huang, JianJang ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 09期

关键词：

Amorphous InGaZnO; subthreshold swing (SS); thin-film transistors (TFTs); TFTS;

D O I：

10.1109/LED.2011.2160931

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Subthreshold swing (SS) is a key parameter in evaluating the power consumption and material properties of thin-film transistors (TFTs). In this letter, we report an amorphous indium gallium zinc oxide (a-IGZO) TFT with a high-kappa SiO2/HfO2 gate insulator. The device shows a SS of 96 mV/decade and an on-to-off current ratio of 1.5 x 10(10). The low SS was attributed to the fully depleted channel state, low interface defects, and efficient modulation of the device. With low defect states, the device demonstrates only 2.71% change of operating currents after 1.5 x 10(4) s stress.

引用

页码：1245 / 1247

页数：3

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