Low subthreshold swing HfLaO/pentacene organic thin-film transistors

We have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of - 1.3 V, and a field-effect mobility of 0.71 cm(2)/V.s. This occurred along with an ON-OFF state drive current ratio of 1.0 x 10(5), when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm(2) that is given by the HftaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 x 10(-7) A/cm(2) at 2 V.