Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

被引：56

作者：

Chang, M. F. ^{[1
,2
]}

Lee, P. T. ^{[1
,2
]}

McAlister, S. P. ^{[3
]}

Chin, Albert ^{[4
,5
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[3] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Nanoelect Consortium Taiwan, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期

关键词：

Flexible; HfLaO; high-kappa; organic thin-film transistors (OTFTs); pentacene; MIM CAPACITORS; DRIVEN; TEMPERATURE;

D O I：

10.1109/LED.2008.2010416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pentacene organic thin-film transistors (OTFTs) with a high-k HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm(2)/V . s at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.

引用

页码：133 / 135

页数：3

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