Time-resolved measurement of film growth during high-power pulsed magnetron sputtering (HPPMS) of titanium: the rotating shutter concept

被引:8
|
作者
Mitschker, F. [1 ]
Prenzel, M. [1 ]
Benedikt, J. [1 ]
von Keudell, A. [1 ]
机构
[1] Ruhr Univ Bochum, Inst Expt Phys 2, Res Dept Plasmas Complex Interact, D-44780 Bochum, Germany
关键词
D O I
10.1088/0022-3727/45/40/402001
中图分类号
O59 [应用物理学];
学科分类号
摘要
The growth rate during high-power pulsed magnetron sputtering (HPPMS) of titanium is measured with a temporal resolution of up to 54 mu s using a rotating shutter concept. According to that concept a 200 mu m slit is rotated in front of the substrate synchronous with the HPPMS pulses. Thereby, the growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry, the temporal variation of the growth flux per pulse is deduced. The analysis reveals that film growth occurs mainly during a HPPMS pulse, with the growth rate slowly increasing during the pulse and decaying afterwards with a decay time of 100 mu s. The maximum of film deposition shifts to earlier times in the pulse with increasing peak power.
引用
收藏
页数:4
相关论文
共 47 条
  • [21] A Comparative Investigation on the Microstructure and Thermal Resistance of W-Film Sensor Using dc Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering
    Huan, Jing
    Wu, Zhengtao
    Wang, Qimin
    Zhang, Shihong
    Kwon, Se-Hun
    MAGNETOCHEMISTRY, 2023, 9 (04)
  • [22] Growth Rate of Titanium Thin Film by High-Power Pulsed Sputtering (HPPS) Penning Discharge Plasma with the Inner Electrode
    Azuma, Kingo
    Higuchi, Toru
    Inoue, Yusuke
    11TH APCPST (ASIA PACIFIC CONFERENCE ON PLASMA SCIENCE AND TECHNOLOGY) AND 25TH SPSM (SYMPOSIUM ON PLASMA SCIENCE FOR MATERIALS), 2013, 441
  • [23] The physical reason for the apparently low deposition rate during high-power pulsed magnetron sputtering
    Emmerlich, Jens
    Mraz, Stanislav
    Snyders, Rony
    Jiang, Kaiyun
    Schneider, Jochen M.
    VACUUM, 2008, 82 (08) : 867 - 870
  • [24] Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering
    Stranak, Vitezslav
    Quaas, Marion
    Bogdanowicz, Robert
    Steffen, Hartmut
    Wulff, Harm
    Hubicka, Zdenek
    Tichy, Milan
    Hippler, Rainer
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (28)
  • [25] Origin of the energetic ions at the substrate generated during high power pulsed magnetron sputtering of titanium
    Maszl, C.
    Breilmann, W.
    Benedikt, J.
    von Keudell, A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (22)
  • [26] Process characteristics and film properties upon growth of TiOx films by high power pulsed magnetron sputtering
    Sarakinos, K.
    Alami, J.
    Wuttig, M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (07) : 2108 - 2114
  • [27] Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering
    Hattori, Katsuhiro
    Ohta, Takayuki
    Oda, Akinori
    Kousaka, Hiroyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (01)
  • [28] Effect of plasma process parameters on the wear behavior of High-Power Pulsed Magnetron Sputtering deposited Aluminum Titanium Nitride coatings
    Naveed, Muhammad
    Qadir, Awais
    OPEN CERAMICS, 2025, 21
  • [29] TIME RESOLVED TUNABLE DIODE LASER ABSORPTION SPECTROSCOPY ON Al AND ArM ATOMS IN HIGH POWER PULSED MAGNETRON SPUTTERING
    Vitelaru, C.
    Minea, T.
    De Poucques, L.
    Ganciu, M.
    Popa, G.
    ROMANIAN JOURNAL OF PHYSICS, 2011, 56 : 47 - 53
  • [30] Time-Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 μs and 500 μs
    Stranak, V.
    Drache, S.
    Cada, M.
    Hubicka, Z.
    Tichy, M.
    Hippler, R.
    CONTRIBUTIONS TO PLASMA PHYSICS, 2011, 51 (2-3) : 237 - 245