Comprehensive Physics-Based Model for Millimeterwave Transistors

This paper presents a novel comprehensive model for analyzing devices at the W-band and beyond. The presented simulation scheme makes this physics-based model suitable for both small- and large-signal analysis purposes. In this approach, there is no need to extract the intrinsic parameters of the transistor that is the main cause of inaccuracy in other modeling techniques. The semiconductor transport aspects are modeled using a spatially-distributed time-domain simulation. The transmission line theory together with the finite difference method is utilized to account for the wave propagation effects over the electrodes of the transistors. The validity of the proposed model has been evaluated by comparing the simulation results with the measured data from fabricated devices. A power sweep analysis has been conducted for two different frequencies to demonstrate the model's potential for simulating device performance in the linear and nonlinear regions.