Physics-based stability analysis of MOS transistors

被引：2

作者：

Ferrara, A. ^{[1
]}

Steeneken, P. G. ^{[2
,3
]}

Boksteen, B. K. ^{[1
]}

Heringa, A. ^{[2
]}

Scholten, A. J. ^{[2
]}

Schmitz, J. ^{[1
]}

Hueting, R. J. E. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] NXP Semicond, Eindhoven, Netherlands

[3] Delft Univ Technol, Delft, Netherlands

来源：

SOLID-STATE ELECTRONICS | 2015年 / 113卷

关键词：

Power MOSFET; Silicon-on-insulator (SOI); Safe Operating Area (SOA); Safe Operating Volume (SOV); Stability factor; Failure function; DMOS TRANSISTORS; SIMULATION; SILICON;

D O I：

10.1016/j.sse.2015.05.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a physics-based model is derived based on a linearization procedure for investigating the electrical, thermal and electro-thermal instability of power metal-oxide-semiconductor (MOS) transistors. The proposed model can be easily interfaced with a circuit or device simulator to perform a failure analysis, making it particularly useful for power transistors. Furthermore, it allows mapping the failure points on a three-dimensional (3D) space defined by the gate-width normalized drain current, drain voltage and junction temperature. This leads to the definition of the Safe Operating Volume (Soy), a powerful frame work for making failure predictions and determining the main root of instability (electrical, thermal or electro-thermal) in different bias and operating conditions. A comparison between the modeled and the measured SOV of silicon-on-insulator (SOI) LDMOS transistors is reported to support the validity of the proposed stability analysis. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：28 / 34

页数：7

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