A Physics-Based Analytical 1/f Noise Model for RESURF LDMOS Transistors

被引：9

作者：

Mahmud, M. Iqbal ^{[1
,2
]}

Celik-Butler, Zeynep ^{[1
,2
]}

Hao, Pinghai ^{[3
]}

Srinivasan, Purushothaman ^{[3
]}

Hou, Fan-Chi ^{[3
]}

Cheng, Xu ^{[4
]}

Amey, Benjamin L. ^{[3
]}

Pendharkar, Sameer ^{[3
]}

机构：

[1] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA

[2] Univ Texas Arlington, Nanotechnol Res & Teaching Facil, Arlington, TX 76019 USA

[3] Texas Instruments Inc, Dallas, TX 75243 USA

[4] Freescale Semicond Inc, Tempe, AZ 85284 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 02期

关键词：

Extended drain; lateral double-diffused MOS (LDMOS); n-well resistor; reduced-surface-field (RESURF); unified 1/f noise model; 1/f noise; LOW-FREQUENCY NOISE; DEGRADATION; MOSFETS;

D O I：

10.1109/TED.2012.2226178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based model has been implemented to describe the low-frequency noise behavior in differently processed reduced-surface-field lateral double-diffused MOS devices. The developed model is based upon the correlated carrier number and the mobility fluctuation theory known as the unified model but has been modified to account for the fluctuations in the extended drain and the channel. Unlike the unified 1/f noise model, nonuniform trap distribution has been taken into account with respect to position in the gate oxide and band-gap energy. The effect of stress on dc and noise characteristics has been investigated. Individual resistance and noise components in the channel and in the extended drain regions under the gate and field oxides are evaluated as a function of stress duration. The model is experimentally verified to identify the physical mechanisms for degradation due to stressing.

引用

页码：677 / 683

页数：7

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