Spin effects in magnetoresistance induced in an n-InxGa1-xAs/GaAs double quantum well by a parallel magnetic field

Magnetoresistance in n-InxGa1 - xAs/GaAs (x approximate to 0.18) heterostructures with double quantum wells (DQWs) was studied in the magnetic field parallel to the DQW layer. Specific features of the magnetoresistance, related to the passing of the tunnel gap edges across the Fermi level, are revealed and studied. Agreement between the calculated and experimental positions of the observed features is obtained when the spin splitting of the energy spectrum is taken into account. Earlier, similar features were observed in the magnetoresistance of n-GaAs/AlxGa1 - xAs DQW heterostructures, but the spin effects did not manifest themselves. (C) 2005 Pleiades Publishing, Inc.