The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well

We have calculated the ground state binding energy using variational methods and the effective mass approximation for the hydrogenic impurity in square quantum well structure made up of GaAs/InGaAs/GaAs epilayers under the action of hydrostatic pressure and temperature for different well widths and barrier heights. The effects of the variation of hydrostatic pressure and temperature can be summarized as follows; impurity binding energy is a negligibly decreasing function of temperature for fixed pressure and is an increasing function of pressure for fixed temperature. (C) 2015 Elsevier Ltd. All rights reserved.