H2O2-microwave treated graphite stabilized stearic acid as a composite phase change material for thermal energy storage

被引:23
|
作者
Li, Chuanchang [1 ,2 ]
Xie, Baoshan [1 ]
Chen, Jian [1 ]
Chen, Zhongsheng [2 ]
Sun, Xiaoqin [1 ]
Gibb, Stuart W. [1 ,3 ]
机构
[1] Changsha Univ Sci & Technol, Sch Energy & Power Engn, Changsha 410114, Hunan, Peoples R China
[2] East China Inst Technol, State Key Lab Breeding Base Nucl Resources & Envi, Nanchang 330013, Jiangxi, Peoples R China
[3] Univ Highlands & Islands, North Highland Coll, Ctr Energy & Environm, Environm Res Inst, Thurso KW14 7JD, Caithness, Scotland
来源
RSC ADVANCES | 2017年 / 7卷 / 83期
基金
中国国家自然科学基金;
关键词
CARBON COMPOSITE; GRAPHENE OXIDE; PCM; PERFORMANCE; NANOPLATELETS; TECHNOLOGIES; ENHANCEMENT; CONVERSION; SURFACE; MATRIX;
D O I
10.1039/c7ra11016b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Flake graphite (FG) was treated by microwave radiation in hydrogen peroxide solution and used to support stearic acid (SA) to synthesize SA/FG composites for thermal energy storage. The thermostability of the SA/FG was measured via TG-DSC, revealing they have good thermal stability up to 230 degrees C. The thermal properties of the composites were changed by varying the radiation time, and the SA/FG(3) composite with the longest FG treatment time showed a higher latent heat value (61.05 J g(-1) for melting and 61.00 J g(-1) for freezing), and greater crystallinity (F-c, 98.34%) than other samples according to the analysis of DSC. The SA/FG(3) composite had a good thermal reliability after thermal cycling tests. The thermal conductivity of SA/FG(3) (3.18 W m(-1) k(-1)) was 12.2 times higher than that of pure SA. Furthermore, the mechanism of the enhanced performance of SA/FG(3) was further revealed by monitoring functional groups of the surface of FG and demonstrated on the atomic-scale. Infrared imaging showed SA/FG(3) possessed superior thermal-regulated properties. Therefore, all these thermal properties indicate SA/FG(3) has potential for application in thermal energy storage systems.
引用
收藏
页码:52486 / 52495
页数:10
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