Static impedance behavior of programmable metallization cells

被引：22

作者：

Rajabi, S. ^{[1
]}

Saremi, M. ^{[1
]}

Barnaby, H. J. ^{[1
]}

Edwards, A. ^{[2
]}

Kozicki, M. N. ^{[1
]}

Mitkova, M. ^{[3
]}

Mahalanabis, D. ^{[1
]}

Gonzalez-Velo, Y. ^{[1
]}

Mahmud, A. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Air Force Res Lab, Space Vehicles Directorate, Kirtland AFB, NM USA

[3] Boise State Univ, Dept Elect & Comp Engn, Boise, ID 83725 USA

来源：

SOLID-STATE ELECTRONICS | 2015年 / 106卷

关键词：

Chalcogenide; Impedance; Parametric model; Programmable metallization cells; Resistive RAM (ReRAM); Nano-ionic memory; THIN-FILMS; AG;

D O I：

10.1016/j.sse.2014.12.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfuncdons, density of states, carrier mobilities, dielectric constants, and affinities. Published by Elsevier Ltd.

引用

页码：27 / 33

页数：7

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