Static impedance behavior of programmable metallization cells

被引：22

作者：

Rajabi, S. ^{[1
]}

Saremi, M. ^{[1
]}

Barnaby, H. J. ^{[1
]}

Edwards, A. ^{[2
]}

Kozicki, M. N. ^{[1
]}

Mitkova, M. ^{[3
]}

Mahalanabis, D. ^{[1
]}

Gonzalez-Velo, Y. ^{[1
]}

Mahmud, A. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Air Force Res Lab, Space Vehicles Directorate, Kirtland AFB, NM USA

[3] Boise State Univ, Dept Elect & Comp Engn, Boise, ID 83725 USA

来源：

SOLID-STATE ELECTRONICS | 2015年 / 106卷

关键词：

Chalcogenide; Impedance; Parametric model; Programmable metallization cells; Resistive RAM (ReRAM); Nano-ionic memory; THIN-FILMS; AG;

D O I：

10.1016/j.sse.2014.12.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfuncdons, density of states, carrier mobilities, dielectric constants, and affinities. Published by Elsevier Ltd.

引用

页码：27 / 33

页数：7

共 50 条

[31] Metallization of bacteria cells
Xiangfeng Li
Yaqin Li
Jun Cai
Deyuan Zhang
Science in China Series E: Technological Sciences, 2003, 46 : 161 - 167
[32] Energy Flows in Static and Programmable Catalysts
Dauenhauer, Paul J.
Abdelrahman, Omar A.
ACS ENERGY LETTERS, 2023, 8 (05) : 2292 - 2299
[33] Metallization of bacteria cells
黎向锋
李雅芹
蔡军
张德远
Science China Technological Sciences, 2003, (02) : 161 - 167
[34] Metallization of bacteria cells
Li, XF
Li, YQ
Cai, J
Zhang, DY
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 46 (02): : 161 - 167
[35] Parallel programmable nonvolatile memory using ordinary static random access memory cells
Mizutani, Tomoko
Takeuchi, Kiyoshi
Saraya, Takuya
Shinohara, Hirofumi
Kobayashi, Masaharu
Hiramoto, Toshiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
[36] The electrochemical impedance behavior of the living cells Escherichia coli
Li, W
Feng, J
Yang, HQ
Ci, YX
CHINESE CHEMICAL LETTERS, 1997, 8 (12) : 1071 - 1072
[37] The Electrochemical Impedance Behavior of the Living Cells Escherichia Coli
Wei LI
Jun FENG
Hua Quan YANG and Yun Xiang CI(Department of Chemistry
Chinese Chemical Letters, 1997, (12) : 0 - 0
[38] Fabrication and characterization of Cu2O/Cu-WO3 bilayers for lateral programmable metallization cells
Balaban, Mehmet B.
Chamele, Ninad
Swain, Smitha S.
Gonzalez-Velo, Yago
Kozicki, Michael N.
APPLIED SURFACE SCIENCE, 2020, 527
[39] Analog Tunnel Memory Based on Programmable Metallization for Passive Neuromorphic Circuits
Ma, Zelin
Ge, Jun
Chen, Wanjun
Cao, Xucheng
Diao, Shanqing
Huang, Haiming
Liu, Zhiyu
Wang, Weiliang
Pan, Shusheng
ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (42) : 47941 - 47951
[40] Inherent diode isolation in programmable metallization cell resistive memory elements
Puthentheradam, Sarath C.
Schroder, Dieter K.
Kozicki, Michael N.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (04): : 817 - 826

← 1 2 3 4 5 →