Static impedance behavior of programmable metallization cells

被引：22

作者：

Rajabi, S. ^{[1
]}

Saremi, M. ^{[1
]}

Barnaby, H. J. ^{[1
]}

Edwards, A. ^{[2
]}

Kozicki, M. N. ^{[1
]}

Mitkova, M. ^{[3
]}

Mahalanabis, D. ^{[1
]}

Gonzalez-Velo, Y. ^{[1
]}

Mahmud, A. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Air Force Res Lab, Space Vehicles Directorate, Kirtland AFB, NM USA

[3] Boise State Univ, Dept Elect & Comp Engn, Boise, ID 83725 USA

来源：

SOLID-STATE ELECTRONICS | 2015年 / 106卷

关键词：

Chalcogenide; Impedance; Parametric model; Programmable metallization cells; Resistive RAM (ReRAM); Nano-ionic memory; THIN-FILMS; AG;

D O I：

10.1016/j.sse.2014.12.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of metal ions in the ChG films via photo-doping to lower the off-state resistance and stabilize resistive switching, and subsequent transport of these ions by electric fields induced from an externally applied bias. In this paper, the static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film with active Ag and inert Ni electrodes is characterized and modeled using three dimensional simulation code. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfuncdons, density of states, carrier mobilities, dielectric constants, and affinities. Published by Elsevier Ltd.

引用

页码：27 / 33

页数：7

共 50 条

[1] Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer
Chen, W.
Barnaby, H. J.
Kozicki, M. N.
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (05) : 576 - 579
[2] Impedance Measurement and Characterization of Ag-Ge30Se70-Based Programmable Metallization Cells
Mahalanabis, Debayan
Gonzalez-Velo, Yago
Barnaby, Hugh J.
Kozicki, Michael N.
Dandamudi, Pradeep
Vrudhula, Sarma
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (11) : 3723 - 3730
[3] Total-Ionizing-Dose Effects on the Impedance of Silver-doped Chalcogenide Programmable Metallization Cells
Gonzalez-Velo, Yago
Barnaby, Hugh J.
Kozicki, Michael N.
Holbert, Keith
2014 IEEE AEROSPACE CONFERENCE, 2014,
[4] Programmable Metallization Cells in Memory and Switching Applications
Kozicki, M. N.
Dandamudi, P.
Barnaby, H. J.
Gonzalez-Velo, Y.
NONVOLATILE MEMORIES 2, 2013, 58 (05): : 47 - 52
[5] Studying of threshold switching behavior based on programmable metallization cells selector by KMC method
Zhang, Puyi
Ma, Guokun
Xiong, Zhiyuan
Chen, Ao
Wang, Cheng
Zhang, Lei
Liu, Nengfan
Yuan, Xiaoxu
Liu, Tianjian
Wang, Hao
VACUUM, 2023, 218
[6] Ionizing Radiation Effects on Nonvolatile Memory Properties of Programmable Metallization Cells
Taggart, J. L.
Gonzalez-Veto, Y.
Mahalanabis, D.
Mahmud, A.
Bamaby, H. J.
Kozicki, M. N.
Holbert, K. E.
Mitkova, M.
Wolf, K.
Deionno, E.
White, A. L.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 2985 - 2990
[7] Incremental resistance programming of programmable metallization cells for use as electronic synapses
Mahalanabis, D.
Barnaby, H. J.
Gonzalez-Velo, Y.
Kozicki, M. N.
Vrudhula, S.
Dandamudi, P.
SOLID-STATE ELECTRONICS, 2014, 100 : 39 - 44
[8] Ag-CONDUCTING CHALCOGENIDE GLASSES: APPLICATIONS IN PROGRAMMABLE METALLIZATION CELLS
Pradel, A.
Piarristeguy, A. A.
NANOSTRUCTURED MATERIALS FOR ADVANCED TECHNOLOGICAL APPLICATIONS, 2009, : 435 - 444
[9] A physical-based simulation for the dynamic behavior of photodoping mechanism in chalcogenide materials used in the lateral programmable metallization cells
Saremi, Mehdi
SOLID STATE IONICS, 2016, 290 : 1 - 5
[10] Metallization by static compression
Proceedings of the International School of Physics Enrico Fermi, 1991,

← 1 2 3 4 5 →