Tunneling magnetoresistance oscillations due to charging effects in MgO double barrier magnetic tunnel junctions

被引：15
|
作者：
Liu, Ruisheng [1 ]
Yang, See-Hun [1 ]
Jiang, Xin [1 ]
Topuria, Teya [1 ]
Rice, Philip M. [1 ]
Rettner, Charles [1 ]
Parkin, Stuart [1 ]
机构：
[1] IBM Res, Almaden Res Ctr, San Jose, CA 95120 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 01期
关键词：
SPIN ACCUMULATION;
D O I：
10.1063/1.3673557
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We observe single-electron tunneling effect and tunneling magnetoresistance (TMR) oscillations in MgO double barrier magnetic tunnel junctions patterned with electron beam lithography and argon ion milling. The TMR oscillations are induced by the interplay of single charge effect and spin-dependent tunneling. The oscillations and its period can be well-controlled by properly engineering the thickness of MgO tunnel barriers and the size of the tunnel junctions. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3673557]
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页数：3
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