Quantum oscillations of tunneling magnetoresistance in magnetic tunnel junctions

被引:24
|
作者
Yang, J [1 ]
Wang, J
Zheng, ZM
Xing, DY
Chang, CR
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] PAL Univ Sci & Technol, Inst Sci, Nanjing 210007, Peoples R China
[4] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
关键词
D O I
10.1103/PhysRevB.71.214434
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Taking into account a tunneling current with ballistic and diffusive components, we study the tunneling magnetoresistance (MR) in FM/I/NM/I/FM double tunnel junctions where FM is the ferromagnet, NM the normal metal, and I the insulating barrier. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with thickness of the NM layer. It is shown that the experimental results observed in NiFe/Al2O3/Cu/Co junctions by Yuasa, Nagahama, and Suzuki [Science 297, 234 (2002)] are intrinsic features, which can be reproduced by the present calculations.
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页数:5
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