Fabrication of single crystalline diamond triode electron emitter

被引：3
|
作者：
Vinod, PR [1 ]
Yamada, T [1 ]
Hwang, DS [1 ]
Fujimori, N [1 ]
机构：
[1] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 16-19期
关键词：
diamond; Spindt-type emitter; field emission; nano structure; sputtering;
D O I：
10.1143/JJAP.44.L497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel and simple technique is proposed for the fabrication of gated single crystalline diamond Spindt-type emitter array with a small and precise gate aperture. An interesting silicon oxide deposition pattern 'sphere on cone' enabled controlled gate opening by wet chemical etching. Using this technique a highly uniform Spindt-type emitter array with a specified gate aperture of 1.41 mu m has been fabricated. Study on controlled field emission indicates the normal operation of the fabricated emitter.
引用
收藏
页码：L497 / L499
页数：3
相关论文
共 50 条
  • [41] Electron emitter device of NEA diamond thin film
    Hata, A
    Ogawa, K
    Eimori, N
    Deguchi, M
    Kitabatake, M
    Ito, T
    Hiraki, A
    APPLIED SURFACE SCIENCE, 1997, 117 : 592 - 596
  • [42] Growth of homoepitaxial diamond doped with nitrogen for electron emitter
    Yamada, T
    Sawabe, A
    Koizumi, S
    Kamio, T
    Okano, K
    DIAMOND AND RELATED MATERIALS, 2002, 11 (02) : 257 - 261
  • [43] Electron emission from a heteroepitaxial diamond planar emitter
    Yamada, Takatoshi
    Maede, Jun
    Sawabe, Atsuhito
    Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (8 B):
  • [44] Thermodynamic characterization of a diamond-based electron emitter
    Fisher, TS
    Strauss, AM
    Davidson, JL
    Kang, WP
    SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM, PTS 1 AND 2, 2000, 504 : 1313 - 1318
  • [45] Electron emission from gated diamond emitter array
    Ha, SC
    Kang, DH
    Kim, BS
    Min, SH
    Kim, KB
    MATERIALS ISSUES IN VACUUM MICROELECTRONICS, 1998, 509 : 77 - 82
  • [46] Electron emission from a heteroepitaxial diamond planar emitter
    Yamada, T
    Maede, J
    Sawabe, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (8B): : L902 - L903
  • [47] Electronic properties of diamond thin film for planar diamond electron emitter applications
    Maki, T
    Kawamura, H
    Kato, S
    Liu, JP
    Kobayashi, T
    APPLIED SURFACE SCIENCE, 2000, 159 (159) : 583 - 587
  • [48] Doping of single crystalline diamond with nickel
    Wolfer, M.
    Obloh, H.
    Williams, O. A.
    Leancu, C-C
    Kirste, L.
    Gheeraert, E.
    Nebel, C. E.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (09): : 2054 - 2057
  • [49] Noise of a single-electron emitter
    Moskalets, Michael
    PHYSICAL REVIEW B, 2013, 88 (03)
  • [50] Noise of a single electron emitter: experiment
    Parmentier, F. D.
    Bocquillon, E.
    Mahe, A.
    Berroir, J. -M.
    Glattli, D. C.
    Placais, B.
    Feve, G.
    Cavanna, A.
    Jin, Y.
    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 94 - 99
12345