Fabrication of single crystalline diamond triode electron emitter

被引：3
|
作者：
Vinod, PR [1 ]
Yamada, T [1 ]
Hwang, DS [1 ]
Fujimori, N [1 ]
机构：
[1] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 16-19期
关键词：
diamond; Spindt-type emitter; field emission; nano structure; sputtering;
D O I：
10.1143/JJAP.44.L497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel and simple technique is proposed for the fabrication of gated single crystalline diamond Spindt-type emitter array with a small and precise gate aperture. An interesting silicon oxide deposition pattern 'sphere on cone' enabled controlled gate opening by wet chemical etching. Using this technique a highly uniform Spindt-type emitter array with a specified gate aperture of 1.41 mu m has been fabricated. Study on controlled field emission indicates the normal operation of the fabricated emitter.
引用
收藏
页码：L497 / L499
页数：3
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