Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

被引：4
|
作者：
Allerstam, F. [1 ]
Gudjonsson, G. [1 ]
Sveinbjoernsson, E. O. [1 ]
Roedle, T. [2 ]
Jos, R. [2 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
[2] Philips Semicond BV, NL-6534 AE Nijmegen, Netherlands
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
deep interface trap; interface states; sodium;
D O I：
10.4028/www.scientific.net/MSF.556-557.517
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3x10(12) cm(-2) and their activation energy is larger than 0.8 eV.
引用
收藏
页码：517 / +
页数：2
相关论文
共 50 条
  • [41] The Effects of Boron Passivation and Re-Oxidation on the Properties of the 4H-SiC/SiO2 Interface
    Chungbu Jeong
    Kwangsoo Kim
    Journal of the Korean Physical Society, 2019, 74 : 679 - 683
  • [42] The Effects of Boron Passivation and Re-Oxidation on the Properties of the 4H-SiC/SiO2 Interface
    Jeong, Chungbu
    Kim, Kwangsoo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2019, 74 (07) : 679 - 683
  • [43] Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy
    Choi, S. H.
    Wang, D.
    Williams, J. R.
    Park, M.
    Lu, W.
    Dhar, S.
    Feldman, L. C.
    APPLIED SURFACE SCIENCE, 2007, 253 (12) : 5411 - 5414
  • [44] Detection and Electrical Characterization of Defects at the SiO2/4H-SiC: Interface
    Krieger, Michael
    Beljakowa, Svetlana
    Zippelius, Bernd
    Afanas'ev, Valeri V.
    Bauer, Anton J.
    Nanen, Yuichiro
    Kimoto, Tsunenobu
    Pensl, Gerhard
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 463 - +
  • [45] XPS study of nitrogen and phosphorus at the 4H-SiC/SiO2 interface
    Xu, Yi
    Zhu, Xingguang
    Liu, Gang
    Williams, John
    Lee, Hang Dong
    Wielunski, Leszek
    Gustafsson, Torgny
    Lu, Weijie
    Garfunkel, Eric L.
    Feldman, Leonard C.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2012, 244
  • [46] Transition region study of SiO2/4H-SiC interface by ADXPS
    School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116024, China
    Pan Tao Ti Hsueh Pao, 2008, 5 (944-949):
  • [47] Reduction in the density of interface states at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium
    Hermannsson, Petur Gordon
    Sveinbjornsson, Einar O.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 334 - 337
  • [48] Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities
    Hatakeyama, Tetsuo
    Masuda, Teruyoshi
    Sometani, Mitsuru
    Harada, Shinsuke
    Okamoto, Dai
    Yano, Hiroshi
    Yonezawa, Yoshiyuki
    Okumura, Hajime
    APPLIED PHYSICS EXPRESS, 2019, 12 (02)
  • [49] Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface
    Zheng, Liu
    Sun, Guosheng
    Zhang, Feng
    Liu, Shengbei
    Liu, Bin
    Dong, Lin
    Wang, Lei
    Zhao, Wanshun
    Liu, Xingfang
    Yan, Guoguo
    Tian, Lixin
    Zeng, Yiping
    APPLIED SURFACE SCIENCE, 2013, 280 : 500 - 503
  • [50] Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC
    Naik, H.
    Li, Z.
    Chow, T. P.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 519 - 522
12345