Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

被引：4

作者：

Allerstam, F. ^{[1
]}

Gudjonsson, G. ^{[1
]}

Sveinbjoernsson, E. O. ^{[1
]}

Roedle, T. ^{[2
]}

Jos, R. ^{[2
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Philips Semicond BV, NL-6534 AE Nijmegen, Netherlands

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

deep interface trap; interface states; sodium;

D O I：

10.4028/www.scientific.net/MSF.556-557.517

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3x10(12) cm(-2) and their activation energy is larger than 0.8 eV.

引用

页码：517 / +

页数：2

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