Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

被引：4
|
作者：
Allerstam, F. [1 ]
Gudjonsson, G. [1 ]
Sveinbjoernsson, E. O. [1 ]
Roedle, T. [2 ]
Jos, R. [2 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
[2] Philips Semicond BV, NL-6534 AE Nijmegen, Netherlands
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
deep interface trap; interface states; sodium;
D O I：
10.4028/www.scientific.net/MSF.556-557.517
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3x10(12) cm(-2) and their activation energy is larger than 0.8 eV.
引用
收藏
页码：517 / +
页数：2
相关论文
共 50 条
  • [1] A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation
    Allerstam, F.
    Olafsson, H. O.
    Gudjonsson, G.
    Dochev, D.
    Sveinbjornsson, E. O.
    Rodle, T.
    Jos, R.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [2] Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface
    Hermannsson, Petur Gordon
    Allerstam, Fredrik
    Hauksson, Sigtryggur
    Sveinbjornsson, Einar O.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 749 - +
  • [3] Shallow electron traps at the 4H-SiC/SiO2 interface
    Afanas'ev, VV
    Stesmans, A
    Bassler, M
    Pensl, G
    Schulz, MJ
    APPLIED PHYSICS LETTERS, 2000, 76 (03) : 336 - 338
  • [4] A study of the shallow electron traps at the 4H-SiC/SiO2 interface
    Olafsson, HÖ
    Sveinbjörnsson, EÖ
    Rudenko, TE
    Kilchytska, VI
    Tyagulski, IP
    Osiyuk, IN
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 547 - 550
  • [5] Passivation and depassivation of interface traps at the SiO2/4H-SiC interface by potassium ions
    Hermannsson, Petur Gordon
    Sveinbjornsson, Einar O.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 761 - 764
  • [6] Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC
    McDonald, K
    Weller, RA
    Pantelides, ST
    Feldman, LC
    Chung, GY
    Tin, CC
    Williams, JR
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2719 - 2722
  • [7] SiO2/4H-SiC Interface Traps Effects on the Input Capacitance of DMOSFET
    Licciardo, Gian-Domenico
    Di Benedetto, Luigi
    2016 11TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM), 2016, : 19 - 22
  • [8] Reduction of density of 4H-SiC/SiO2 interface traps by pre-oxidation phosphorus implantation
    Sledziewski, T.
    Mikhaylov, A.
    Reshanov, S.
    Schoner, A.
    Weber, H. B.
    Krieger, M.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 575 - +
  • [9] A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen
    Allerstam, F.
    Sveinbjornsson, E. O.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 755 - 758
  • [10] Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation
    Akiyama, Toru
    Hori, Shinsuke
    Nakamura, Kohji
    Ito, Tomonori
    Kageshima, Hiroyuki
    Uematsu, Masashi
    Shiraishi, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
12345